GaN layer thickness up to 8um on sapphire

GaN layer thickness up to 8um on sapphire

GaN layer thickness up to 1.5um on sapphire

GaN layer thickness up to 4um on sapphire

HEMT structure on sapphire

LED structure (390-450nm wavelength) on sapphire

a-plane GaN on r-plane sapphire

GaN on bulk GaN

GaN on bulk GaN

GaN on bulk GaN

LED structures (390nm-450nm wavelength) on bulk GaN

HEMT structure on semi-insulating bulk GaN

GaN on n-type or semi-insulating SiC

GaN on n-type or semi-insulating SiC

GaN on n-type or semi-insulating SiC

up to 1.2um GaN on Silicon substrate (111)

n-type SiC layer (doped with Nitrogen)

p-type SiC layer (doped with Aluminium)

undoped SiC layer

Schottky diode structure

PIN diode structure

JFET structure

MISFET structure

undoped AlN on SiC

Graphene on n-type SiC

Graphene on semi-insuling SiC

n-type, p-type and semi-insulating GaAs on GaAs

InGaAsP/GaAs (typically latice-matched)

AlAs/GaAs

InAs/GaAs quantum dots

GaAsP (typically strained)

InGaAlP (typically latice-matched)

InGaP/GaAs (typically latice-matched)

AlGaAs/GaAs QW edge emitting lasers (680 - 870nm)

AlGaAs/GaAs VCSELs

AlGaAs/GaAs HEMTs

AlGaAs/GaAs varactors

GaAsP/GaAs strained QW edge emitting lasers

InGaAsP/GaAs QW lasers 808nm

InGaAs/AlGaAs/GaAs strained QW lasers 800-1000nm

InGaAs/GaAs and InAs/GaAs QD lasers

AlGaAs/GaAs passive waveguides

n-type, p-type and undoped InP on InP

InGaAs/InP (typically latice-matched)

InGaAsP/InP passive devices

InAlAs/InP (typically latice-matched)

InAlGaAs/InP (typically latice-matched)

InGaAsP/InP QW edge emitting lasers and SOAs 1300-1600nm

InGaAs/InP edge emitting lasers 1550nm

InGaAsP/InP VCSEL structures

InAlGaAs/InP edge emitting and VCSEL structures

InGaAsP/InP (typically latice-matched)

InP - based photodetectors

InAlAs/InGaAs/InP HEMTs