„True vertical GaN high speed switching transistors for direct diode laser driving (PioneerGaN)”

Project co-financed by National Centre for Research and Development; The first  Polish-Berlin bilateral co-operation Call in Photonics


The Polish side project’s value: PLN 3 302 052.60
The NCBiR co-financing value: PLN 1 562 754.97
Project’s time frame: 01/01/2016 - 31/12/2018

Project Partners:

Ferdinand Braun Institut, Berlin, Germany – Project’s Leader from the German side
Sentech Instruments GmbH, Berlin, Germany
Polski Ośrodek Rozwoju Technologii – The consortium’s leader from the Polish side
Seen Semiconductors sp. z o. o.

Fulfilling the PioneerGaN’s goal GaN based field effect vertical transistors were manufactured. The mono-crystal free-standing ammono-thermal GaN was used as the substrate material. The high speed switching transistors vertical construction allows for its integration with a laser diode. The two device microstructure allows for the laser work in the pulse mode which in turn offers an advantage in the form of high brightness and high beam quality combined with lower thermal effect, ensuring longer laser’s life-time and work quality. With the use of the stepper lithography technology it was possible to obtain the 400mm/mm2 gate length to device area ration. This translates to the 100A – 250A current range and the 70V break-down voltage for the transistor.

The above features enable the device to be applied in many new optoelectronical areas e.i. LIDAR (Light Detection And Ranging) systems, spectroscopy in various areas, medicine, pico-projectors, laser TVs, multi-platform laser displays, where the availability of high optical power is paramount.

More information about the project can be found at tel.: 22 625 12 25, or at the beneficiary email: This email address is being protected from spambots. You need JavaScript enabled to view it.

Important links:
Program’s documentation site: www.ncbr.gov.pl/programy/programy-miedzynarodowe/wspolpraca-dwustronna/
Intermediate Body – The National Centre for Research and Development (NCBiR): www.ncbr.gov.pl
Project Leader – Polski Ośrodek Rozwoju Technologii: www.port.org.pl



 

„Photonic Heterostructures Production Technology for infrared detection (acronim: TeHFoton)”

Project co-financed by National Centre for Research and Development - the III TECHMATSTRATEG Call.

 

Project’s Value: PLN 6 664 406.30

The NCBiR co-financing value: PLN 6 409 899,19

Project’s time frame: 01/07/2021 - 30/06/2024

 

Project Partners::

The Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw – Project Leader

University of Rzeszów, Rzeszów

Seen Semiconductors sp. z o. o. (Ltd.)

The principle project’s objective is to develop a scalable fabrication technology of type I and II GaSb/AlSb, InAs/AlSb and InAs/GaSb superlattice heterostructures with absorption edge in the short- (SWIR, 1.5 – 3 μm), the mid- (MWIR, 3 – 5 μm), the long- (LWIR, 8 – 14 μm) and the very long - infrared wavelength spectral ranges. The scalable photonic heterostructures applied in advanced infrared detection and emission devices customized to end-user specifications will be the products of the project.

In order to achieve its premises, the project has been divided into two phases - the research and the preparation for implementation. The research phase contains nine work tasks, of which eight pertain to industrial research, and is focused on advancing the epitaxy technology and the heterostructures characterization to technology readiness level VI. During work task 9 experimental development works aiming at the improvement of the repeatability of the technology will be carried out in order to bring the technology readiness up to level VII, what will allow to move to the implementation phase. Both superlattices and the complex heterostructures, fabricated with the use of to be developed technology will be targeted to small and medium niche production entities. These specialized products are usually very costly, due to difficulties in the availability of Hi-Tech facilities and the experienced and interdisciplinary staff.

 

More information about the project can be found at tel.: 22 625 12 25, or at the beneficiary email: This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Important links:

Program’s documentation site: https://www.gov.pl/web/ncbr/techmatstrateg

Intermediate Body – The National Centre for Research and Development (NCBiR): https://www.gov.pl/web/ncbr

Project Leader – The Łukasiewicz Research Network – Institute of Microelectronics and Photonics, Warsaw: https://lukasiewicz.gov.pl/en/instytuty/siec-badawcza-lukasiewicz-instytut-technologii-elektronowej-2/

 

Current Procurements

Past Procurements

 

Nr. sprawy: 2/SS/TECHMATSTRATEG/2021

Announcement about launching a tender procedure for the procurement of GaAs and GaSb semiconductor structures.


REQUEST FOR QUOTATION No 2/SS/TECHMATSTRATEG/2021

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Attachment 1 to the request for quotation no. 2/SS/TECHMATSTRATEG/2021

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Attachment 2 to the request for quotation no. 2/SS/TECHMATSTRATEG/2021

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Warsaw, September 15th, 2021

The Procurer, after verifying the fulfillment of the conditions to participate in the tender procedure and taking into account the tender evaluation criteria, considered the most advantageous:

  1. in the scope of delivery of GaAs semiconductor substrates, n-type, 2-inch, at the price of USD 109 / PLN 419.60 and GaAs semiconductor substrates, SI-type, 2-inch, at the price of USD 145 / PLN 558.18 offer submitted by AXT-TONGMAI, Inc. Fremont, CA 94538, USA. This offer obtained the highest number of points (100 points) within the offer evaluation criteria and thus the bid has been accepted.
  2. in the scope of delivery of GaSb semiconductor substrates, p-type, 2-inch, at the price of EUR 384 / PLN 1742.82 and GaSb semiconductor substrates, n-type, 2-inch, at the price of EUR 384 / PLN 1742.82, offer submitted by Wafer Technology, Ltd. Milton Keynes, MK 15 8HJ, GB. This offer obtained the highest number of points (100 points) within the offer evaluation criteria and the bid has been accepted.